A HALL-EFFECT MICROSENSOR FOR MICROMECHANICAL DEVICE CHARACTERIZATION

Authors
GRANDE WJ REZNIK S ERTEL J
Citation
Wj. Grande et al., A HALL-EFFECT MICROSENSOR FOR MICROMECHANICAL DEVICE CHARACTERIZATION, IEEE transactions on magnetics, 33(5), 1997, pp. 3394-3396
Citations number
4
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied
Journal title
IEEE transactions on magnetics → ACNP
ISSN journal
00189464
Volume
33
Issue
5
Year of publication
1997
Part
1
Pages
3394 - 3396
Database
ISI
SICI code
0018-9464(1997)33:5<3394:AHMFMD>2.0.ZU;2-4
Abstract
A Hall Effect microsensor has been fabricated to provide high field, h igh spatial resolution characterization of magnetically based micromec hanical devices. The active sensor material was bismuth deposited on a dielectric-coated silicon substrate. The use of silicon as the substr ate was observed to convey a number of performance and fabrication adv antages.