Yh. Huang et al., THICKNESS DEPENDENCE OF TUNNELING MAGNETORESISTANCE EFFECT IN GRANULAR FE-AL2O3 FILMS, IEEE transactions on magnetics, 33(5), 1997, pp. 3556-3558
The magneto-transport properties of the granular Fe-0.5(Al2O3)(0.5) so
lids with various film thickness have been investigated, The temperatu
re dependence of the resistivity shows that all samples follow a tunne
ling type equation p(T) = p(0)exp(T-o/T)(1/alpha) with p approximate t
o 0.1 similar to 1 Omega cm at 300K and alpha = 2. The results of magn
eto-resistance at 300K indicate that the value is about 4.5% for thick
films. If increases slowly with decreasing Trim thickness. At about 1
50nm, a peak value of TMR is found, which is determined to be 5%. Then
TMR drops sharply with further reducing film thickness. It becomes on
ly 3% at t = 20nm. At low temperatures, the TMR effect becomes larger
and shows similar thickness dependence. However, the values of T-o tha
t relate to the geometry of the tunneling barrier show behavior of opp
osite thickness dependence. A small T-o is associated with a large TMR
effect. In this report, the correlation of the film microstructure an
d the TMR effect are discussed in details.