THICKNESS DEPENDENCE OF TUNNELING MAGNETORESISTANCE EFFECT IN GRANULAR FE-AL2O3 FILMS

Citation
Yh. Huang et al., THICKNESS DEPENDENCE OF TUNNELING MAGNETORESISTANCE EFFECT IN GRANULAR FE-AL2O3 FILMS, IEEE transactions on magnetics, 33(5), 1997, pp. 3556-3558
Citations number
10
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied
ISSN journal
00189464
Volume
33
Issue
5
Year of publication
1997
Part
2
Pages
3556 - 3558
Database
ISI
SICI code
0018-9464(1997)33:5<3556:TDOTME>2.0.ZU;2-W
Abstract
The magneto-transport properties of the granular Fe-0.5(Al2O3)(0.5) so lids with various film thickness have been investigated, The temperatu re dependence of the resistivity shows that all samples follow a tunne ling type equation p(T) = p(0)exp(T-o/T)(1/alpha) with p approximate t o 0.1 similar to 1 Omega cm at 300K and alpha = 2. The results of magn eto-resistance at 300K indicate that the value is about 4.5% for thick films. If increases slowly with decreasing Trim thickness. At about 1 50nm, a peak value of TMR is found, which is determined to be 5%. Then TMR drops sharply with further reducing film thickness. It becomes on ly 3% at t = 20nm. At low temperatures, the TMR effect becomes larger and shows similar thickness dependence. However, the values of T-o tha t relate to the geometry of the tunneling barrier show behavior of opp osite thickness dependence. A small T-o is associated with a large TMR effect. In this report, the correlation of the film microstructure an d the TMR effect are discussed in details.