Coupled NiFeCo/TaN/NiFeCo films with coercivity of 0.42 and 5.94 Oe we
re obtained by varying the substrate bias conditions of the NiFeCo fil
ms. The film with low coercivity had a sharp magnetization reversal pr
ocess, i.e. small switching field distribution. On the other hand, a l
arge switching field distribution, approximately 3.5 Oe, was found on
the sample film with high coercivity. Such different magnetic characte
ristic may be attributed to altering the domain wall energy associated
with induced coupling at NiFeCo/TaN interface due to pit formation in
the NiFeCo film.