NIZN FERRITE THIN-FILMS PREPARED BY FACING TARGET SPUTTERING

Citation
Zh. Qian et al., NIZN FERRITE THIN-FILMS PREPARED BY FACING TARGET SPUTTERING, IEEE transactions on magnetics, 33(5), 1997, pp. 3748-3750
Citations number
5
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied
ISSN journal
00189464
Volume
33
Issue
5
Year of publication
1997
Part
2
Pages
3748 - 3750
Database
ISI
SICI code
0018-9464(1997)33:5<3748:NFTPBF>2.0.ZU;2-9
Abstract
NiZn ferrite thin Rims with the spinel structure have been deposited s uccessfully on glass substrates a:, a relatively low temperature by me ans of the Facing Target Sputtering(PTS) technique, In addition to sub strate temperature, PO2/P (O-2 partial pressure over fetal sputtering pressure) ratio was found to be another main factor to control in-plan e coercivity He and saturation moment density Ms of NiZn ferrite thin films, The increase of Ms is attributed to the increase of the substra te temperature or the decrease of PO2/P ratio; the decrease of Hs: is associated with the increase of both substrate temperature ansi PO2/P ratio, Il's believed that the PO2/P ratio plays a critical role in the formation of NiZn ferrite film, which determines the magnetic propert ies of the film, With the increase of PO2/P ratio, NiZn thin film chan ges from a strong (111), (311) texture-dominated polycrystal structure to an amorphous structure and grain size become smaller, In this stud y, sputtering conditions of NiZn ferrite films were optimized to achie ve a low in-plane coercivity He and a relatively high saturation momen t density Ms.