CRYSTALLIZATION BEHAVIOR OF AMORPHOUS TERFENOL-D THIN-FILMS

Authors
LOVELESS M GURUSWAMY S SHIELD JE
Citation
M. Loveless et al., CRYSTALLIZATION BEHAVIOR OF AMORPHOUS TERFENOL-D THIN-FILMS, IEEE transactions on magnetics, 33(5), 1997, pp. 3937-3939
Citations number
3
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied
Journal title
IEEE transactions on magnetics → ACNP
ISSN journal
00189464
Volume
33
Issue
5
Year of publication
1997
Part
2
Pages
3937 - 3939
Database
ISI
SICI code
0018-9464(1997)33:5<3937:CBOATT>2.0.ZU;2-O
Abstract
The annealing behavior of amorphous terfenol-D thin films is examined in this work Amorphous thin films were prepared by DC magnetron sputte r deposition from alloy targets. Differential scanning calorimetry of these films was performed in the temperature range 100-800 degrees C. Based on DSC data annealing experiments were performed at 400, 550, 57 5, 600 and 650 degrees C. X-ray diffraction shows RFe2 phase is formed when samples are annealed at 575-600 degrees C. Other phases observed are Fe and rare earth oxide.