In this paper we report some results concerning the dependence of the
pulsed voltage output on the exciting magnetic field and on the bias m
agnetic field applied at the exciting or receiving point, for Fa(77.5)
Si(7.5)B(15) amorphous wires used as delay lines, The obtained results
show a strong dependence of the pulsed voltage output on the values o
f the magnetic fields, Magnetic fields up to about 2000 A/m applied at
the receiving point can be detected. Small magnetic fields applied at
the exciting point can be detected using small values of the exciting
magnetic field. Using this technique magnetic field sensors with high
accuracy and sensitivity and absence of hysteresis can be realized, S
uch sensors can be formed in integrated arrays measuring the distribut
ion of the magnetic field along the magnetostrictive delay line axis.