PLASMA PROCESSING TECHNIQUES USED AT CASWELL

Citation
Da. Tossell et al., PLASMA PROCESSING TECHNIQUES USED AT CASWELL, Pure and applied chemistry, 66(6), 1994, pp. 1335-1342
Citations number
13
Categorie Soggetti
Chemistry
Journal title
ISSN journal
00334545
Volume
66
Issue
6
Year of publication
1994
Pages
1335 - 1342
Database
ISI
SICI code
0033-4545(1994)66:6<1335:PPTUAC>2.0.ZU;2-D
Abstract
The application of plasma based deposition and etching processes in ma terials research and device production at GMMT Caswell has been review ed and is discussed briefly here. In particular the deposition of free standing and thin film diamond and ferroelectric films are areas of i ntense activity at GMMT. For diamond CVD techniques as diverse as micr owave plasma and oxy - acetylene torch have been applied to date and a spects of deposition plasma chemistry are presented in relation to mat erial properties. As the technology matures many complex problems emer ge concerning the appropriate methods of increasing deposition rate, u niformity and area coverage towards the levels required for production . These are discussed and potential solutions are outlined. Finally th e use of dual ion beam sputtering (DIBS) to prepare films of lead cont aining multi-component ferroelectric oxides for use in pyroelectric IR detectors and imagers is described. This process uses a new generatio n of ion guns relying on RF excitation of the plasma in the gun body. These have several advantages over the more conventional thermally dri ven Kaufman type ion sources in terms of materials processing.