A FINITE-ELEMENT ANALYSIS OF THE MOTION AND EVOLUTION OF VOIDS DUE TOSTRAIN AND ELECTROMIGRATION-INDUCED SURFACE-DIFFUSION

Microelectronic circuits often fail because cracks and voids cause ope n circuits in their interconnects. Many of the mechanisms of failure a re believed to be associated with diffusion of material along the surf aces, interfaces or grain boundaries in the line; material may also fl ow through the lattice of the crystal. The diffusion is driven by vari ations in elastic strain energy and stress in the solid, and by the fl ow of electric current. To predict the conditions necessary for failur e to occur in an interconnect, one must account for the influence of b oth deformation and electric current flow through the interior of the solid, and also for the effects of mass flow. To this end, we describe a two dimensional finite element method for computing the motion and evolution of voids by surface diffusion in an elastic, electrically co nducting solid. Various case studies are presented to demonstrate the accuracy and capabilities of the method, including the evolution of a void towards a circular shape due to diffusion driven by surface energ y, the migration and evolution of a void in a conducting strip due to electromigration induced surface diffusion, and the evolution of a voi d in an elastic solid due to strain energy driven surface diffusion. ( C) 1997 Elsevier Science Ltd.