PERFECT SPATIAL ORDERING OF SELF-ORGANIZED INGAAS ALGAAS BOX-LIKE STRUCTURE ARRAY ON GAAS (311)B SUBSTRATE WITH SILICON-NITRIDE DOT ARRAY/

The metalorganic vapor phase epitaxial growth of strained InGaAs/AlGaA s box-like structure self-organized on GaAs (311)B substrate was inves tigated using fine silicon nitride (SIN) dot arrays for improving the controllability of self-organization phenomena. AlGaAs barrier layer g rown at 750 similar to C buries SiN dots, forming novel pentagonally s haped hollows on (311)B substrate due to the (-100) facet growth and l ateral growth. The In0.3Ga0.7As layer is preferentially grown in these hollows, then box-like structure is formed in these hollows during th e growth interruption. Successive growth of AlGaAs/In0.3Ga0.7As epilay ers induces the stacking of box-like structures just on top of the bot tom boxes. The pairing probability of bottom and upper boxes is strong ly dependent on the SiN dot array pitch, and the perfect spatial order ing of upper box arrays is achieved when the SiN dot pitch is in a ran ge of 250-300 nm. This approach allows the exact positioning of self-f ormed box structure. (C) 1997 American Institute of Physics.