DETERMINATION OF INTERDIFFUSION COEFFICIENTS OF CATIONS AND ANIONS ININGAAS INP SUPERLATTICE/

The interdiffusion coefficients of cations and anions in InCaAs/InP su perlattices (SLs) on their respective sublattices were analyzed quanti tatively. Double crystal X-ray diffraction and simulation of the rocki ng curves based on dynamical diffraction theory were used to measure t he interface strain that develops during rapid thermal annealing. Low temperature photoluminescence (PL) measurements were also done to asse ss the interdiffusion through the change in ground state transition en ergy of the SL. Simulation with the proper selection of the interdiffu sion coefficients results in proper fitting of the interface strain pr ofile and PL transition energies. Using this method, interdiffusion be haviors of InGaAs/InP SLs with and without SiO2:P capping were analyze d. Interdiffusion coefficients of 5.8 X 10(-17) and 2.9 X 10(-17) cm(2 )/s were obtained for the anion and cation sublattices respectively, w hen the SL without SiO2:P was annealed at 800 degrees C. (C) 1997 Amer ican Institute of Physics.