COMPENSATING DEFECT IN DEEP BURIED LAYERS PRODUCED BY MEV HEAVY-IONS IN N-SILICON

Buried damaged layers in n-silicon created by implantation of MeV heav y ions (Ar+) have been studied by capacitance and current measurements , and spectroscopic techniques such as deep level transient spectrosco py and constant capacitance time analyzed transient spectroscopy. We h ave isolated a new midgap acceptor level-responsible for carrier compe nsation in samples irradiated with doses below amorphization threshold . This defect level is demonstrated to control hysteresis in capacitan ce-voltage characteristics, space charge limited current conduction, a nd premature termination of emission transients. The emission energy o f the defect is observed to be sensitive to degree of disorder in the damaged layer controlled by irradiation dose, and relaxation induced b y heat treatment. (C) 1997 American Institute of Physics.