FIELD ENHANCED DIELECTRONIC RECOMBINATION OF SI11+ IONS

Citation
T. Bartsch et al., FIELD ENHANCED DIELECTRONIC RECOMBINATION OF SI11+ IONS, Physical review letters, 79(12), 1997, pp. 2233-2236
Citations number
22
Categorie Soggetti
Physics
Journal title
ISSN journal
00319007
Volume
79
Issue
12
Year of publication
1997
Pages
2233 - 2236
Database
ISI
SICI code
0031-9007(1997)79:12<2233:FEDROS>2.0.ZU;2-J
Abstract
The enhancement of dielectronic recombination by applied electric fiel ds has been observed and measured for the first time in a wide range o f controlled and measurable fields using multiply charged ions. The he avy ion storage ring CRYRING at Stockholm University was used to store a beam of Si11+ and collide it with a cold electron target. Rydberg r esonances up to n = 25 are resolved for both the 2(p3/2) and 2(p1/2) s eries. The observation of a substantial monotonic increase of the rate coefficient for the group of higher Rydberg states is in puzzling dis agreement with theoretical calculations of electric field enhanced die lectronic recombination.