We study electron addition spectra of quantum dots in a broad range of
electron occupancies starting from the first electron. Spectra for do
ts containing <200 electrons reveal a surprising feature. Electron add
itions are not evenly spaced in gate voltage. Rather, they group into
bunches. With an increasing number of electrons the bunching evolves f
rom occurring randomly to periodically at about every 5th electron. Th
e periodicity of the bunching and features in electron tunneling rates
suggest that the bunching is associated with electron additions into
spatially distinct regions within the dots.