APPLICATION OF SCANNING CAPACITANCE MICROSCOPY TO SEMICONDUCTOR-DEVICES

In this paper we describe the application of scanning capacitance micr oscopy (SCM) to two different types oi samples: a Si semiconductor sam ple with three different dopant regions and a PbTiO3 ferroelectric thi n film deposited on a metal substrate. In our study of the first sampl e, an anomaly in the SCM signal was observed at the p-n junction when the bias voltage was 0 V. There was a discrepancy between the dC/dV ve rsus bias voltage curves obtained from two different types of measurem ents: one derived from SCM images taken at various bias voltages, and the other directly measured by sweeping the bias voltage while the pro be was located at one position. In the case of the second sample, feat ures seen in images of simultaneously acquired SCM and atomic force mi croscopy images imply that smaller size grains do not possess ferroele ctric properties.