DOPANT ELECTROMIGRATION IN SEMICONDUCTORS

Authors
CAHEN D CHERNYAK L
Citation
D. Cahen et L. Chernyak, DOPANT ELECTROMIGRATION IN SEMICONDUCTORS, Advanced materials, 9(11), 1997, pp. 861
Citations number
163
Categorie Soggetti
Material Science
Journal title
Advanced materials → ACNP
ISSN journal
09359648
Volume
9
Issue
11
Year of publication
1997
Database
ISI
SICI code
0935-9648(1997)9:11<861:DEIS>2.0.ZU;2-P
Abstract
Dopant diffusion and drift in semiconductors is reviewed with special emphasis on those materials in which semiconductivity is preserved whe n the dopant concentration changes and ambipolar behavior can be obtai ned by dopant mobility. The Figure is a schematic representation of th e electromigration process in CuInSe2 upon application of an electric field.