EFFECTS OF ELECTRIC-FIELD ON THE EXCITON LINEWIDTH BROADENING DUE TO SCATTERING BY FREE-CARRIERS IN SEMICONDUCTING QUANTUM-WELL STRUCTURES

Authors
KOH TS FENG YP SPECTOR HN
Citation
Ts. Koh et al., EFFECTS OF ELECTRIC-FIELD ON THE EXCITON LINEWIDTH BROADENING DUE TO SCATTERING BY FREE-CARRIERS IN SEMICONDUCTING QUANTUM-WELL STRUCTURES, IEEE journal of quantum electronics, 33(10), 1997, pp. 1774-1778
Citations number
27
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied
Journal title
IEEE journal of quantum electronics → ACNP
ISSN journal
00189197
Volume
33
Issue
10
Year of publication
1997
Pages
1774 - 1778
Database
ISI
SICI code
0018-9197(1997)33:10<1774:EOEOTE>2.0.ZU;2-Y
Abstract
The effects of an applied electric field perpendicular to the well lay ers an the broadening of the exciton linewidth due to scattering by fr ee carriers in semiconducting quantum-well (QW) structures is theoreti cally investigated based on a finite confining potential model. The de pendence of the free carrier-exciton linewidth broadening on carrier c oncentration, temperature, and well width are calculated and discussed for various electric field strengths. It is found that the influence of the electric field on the linewidth broadening is appreciable in wi de wells, while in narrow wells little change is shown even in the pre sence of a strong electric field.