TRANSVERSE-MODE CHARACTERISTICS OF VERTICAL-CAVITY SURFACE-EMITTING LASERS BURIED IN AMORPHOUS GAAS ANTIGUIDE LAYER

Authors
YOO BS CHU HY PARK HH LEE HG LEE JJ
Citation
Bs. Yoo et al., TRANSVERSE-MODE CHARACTERISTICS OF VERTICAL-CAVITY SURFACE-EMITTING LASERS BURIED IN AMORPHOUS GAAS ANTIGUIDE LAYER, IEEE journal of quantum electronics, 33(10), 1997, pp. 1794-1800
Citations number
19
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied
Journal title
IEEE journal of quantum electronics → ACNP
ISSN journal
00189197
Volume
33
Issue
10
Year of publication
1997
Pages
1794 - 1800
Database
ISI
SICI code
0018-9197(1997)33:10<1794:TCOVSL>2.0.ZU;2-Z
Abstract
We report the transverse mode characteristics of InGaAs-GaAs vertical- cavity surface-emitting lasers (VCSEL's) buried in a low-temperature-d eposited amorphous GaAs (a-GaAs) layer. The maximum current maintainin g a stable fundamental transverse mode is increased by the antiguide e ffect of the a-GaAs clad with a high refractive index, For 10- and 15- mu m-diameter devices, we attain a stable single-mode emission over a wide range of current, The antiguide effects and transverse mode profi les in vertical cavity lasers buried in the high refractive index clad are calculated using a two-dimensional beam propagation method.