CORRELATION BETWEEN FIXED POSITIVE CHARGE AND HOT-ELECTRON IMMUNITY FOR NITRIDIZED OXIDES

Nitrogen in the gate oxide of a 3.3-V, 0.4-mu m CMOS technology was mo dulated in a variety of ways, including treatments with N2O, NO, oxida tion at elevated pressure, and post-oxidation annealing, A direct corr elation was observed between the fixed positive charge and the hot-ele ctron immunity, regardless of the means by which the nitrogen was inco rporated, or subsequently annealed, The implication is that one benefi t and one drawback of nitrided-oxide gate oxides are inextricably Link ed, with significant effects on the transistor design.