TEST STRUCTURE TO INVESTIGATE THE SERIES RESISTANCE COMPONENTS OF SOURCE DRAIN STRUCTURE/

The source and drain (S/D) structure is a key element in scaling down the MOSFET for low-power applications below 0.25-mu m dimensions. Here , we report on a simple test structure and show how more detailed info rmation on the parasitic series resistance components of deep submicro n devices can be obtained. Specifically, the dependence of the differe nt resistance components on the process parameters like dose and energ y of implantation, temperature treatment, spacer width, and silicide f ormation can be investigated with high accuracy.