S. Biesemans et al., TEST STRUCTURE TO INVESTIGATE THE SERIES RESISTANCE COMPONENTS OF SOURCE DRAIN STRUCTURE/, IEEE electron device letters, 18(10), 1997, pp. 477-479
The source and drain (S/D) structure is a key element in scaling down
the MOSFET for low-power applications below 0.25-mu m dimensions. Here
, we report on a simple test structure and show how more detailed info
rmation on the parasitic series resistance components of deep submicro
n devices can be obtained. Specifically, the dependence of the differe
nt resistance components on the process parameters like dose and energ
y of implantation, temperature treatment, spacer width, and silicide f
ormation can be investigated with high accuracy.