EMPIRICAL-MODEL FOR THE LOW-FREQUENCY NOISE OF HOT-CARRIER DEGRADED SUBMICRON LDD MOSFETS

This paper discusses the empirical low-frequency (LF) noise behavior o f hot-carrier degraded Lowly-Doped Drain (LDD) n-MOSFET's, which have been fabricated in a 0.7-mu m CMOS technology. It is shown that the in crease of the noise spectral density follows a t(0.3) power law depend ence with stress time, Additionally, an empirical relationship will be shown between the input-referred noise spectral density S-VG and the transconductance g(m) of the stressed devices, The practical consequen ces of this exponential dependence will be briefly discussed.