CYCLIC CURRENT-VOLTAGE CHARACTERIZATION APPLIED TO EDGE DAMAGE EVALUATION IN GATE DEFINITION PLASMA-ETCHING

Authors
OKANDAN M FONASH SJ OZAITA M PREUNINGER F CHAN YD WERKING J
Citation
M. Okandan et al., CYCLIC CURRENT-VOLTAGE CHARACTERIZATION APPLIED TO EDGE DAMAGE EVALUATION IN GATE DEFINITION PLASMA-ETCHING, IEEE electron device letters, 18(10), 1997, pp. 495-498
Citations number
4
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
IEEE electron device letters → ACNP
ISSN journal
07413106
Volume
18
Issue
10
Year of publication
1997
Pages
495 - 498
Database
ISI
SICI code
0741-3106(1997)18:10<495:CCCATE>2.0.ZU;2-9
Abstract
A simple two-terminal cyclic current-voltage (I-V) measuring approach is used to monitor damage in gate definition plasma etching of poly-Si gate 70 Angstrom oxide MOS structures, This new technique is used to identify the presence of trapping and near-surface silicon substrate g eneration lifetime changes due to edge exposure.