INVESTIGATION OF ANOMALOUS LEAKAGE CURRENT IN MESA-ISOLATED SOI MOSFETS

The mechanism of an anomalous leakage current in mesa-isolated SOI NMO SFET's in the short-channel region was analyzed, The enhanced diffusio n of the source-drain impurities was observed in the mesa edge region by Energy Dispersive X-ray Spectroscopy (EDX) analysis, Moreover, usin g high-resolution TEM observation, it was found that there were no cry stalline defects in the edge region, The frequency of leakage currents in short-channel MOSFET's was higher than that of long-channel MOSFET 's. The level of leakage current was not changed by the gate voltage a nd back gate voltage, and the activation energy of the leakage current was almost 0 eV, According to these results, it is concluded that the origin of the anomalous Leakage current is the enhanced diffusion of source-drain impurities.