We have studied magnetism in CeRu2Ge2 and CeRh2Ge2 through specific he
at in zero and applied magnetic fields, DC magnetization, thermal expa
nsion and electrical resistance measurements at pressures to 21 kbar.
Both compounds have two magnetic transitions; although we argue that t
he higher one in CeRu2Ge2 is due to residual stress in the polycrystal
line sample. The overall systematics are consistent with those found a
t ambient pressure in pseudoternaries formed with Si substitution for
Ge.