DOPING STUDIES ON THE ORIGIN OF THE BAND-GAPS IN NII(2-X)BR(X)

Authors
TANG J DAVIS MD OCONNOR CJ WU B
Citation
J. Tang et al., DOPING STUDIES ON THE ORIGIN OF THE BAND-GAPS IN NII(2-X)BR(X), Physica. B, Condensed matter, 199, 1994, pp. 637-639
Citations number
10
Categorie Soggetti
Physics, Condensed Matter
Journal title
Physica. B, Condensed matter → ACNP
ISSN journal
09214526
Volume
199
Year of publication
1994
Pages
637 - 639
Database
ISI
SICI code
0921-4526(1994)199:<637:DSOTOO>2.0.ZU;2-W
Abstract
The effect of bromine doping on the magnetic properties of NiI2 was in vestigated. The Neel temperature T(N) was found to decrease with incre asing bromine doping. This behavior can be well explained using a rela tionship between T(N) and band gap that is modified for an insulator o f charge transfer type. Our study supports the suggestion that NiI2 is not a Mott insulator in the simplest sense but an insulator of charge transfer type.