M. Pindo, SIMULATING CHARGE COLLECTION IN SILICON PIXEL DETECTORS, Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, 395(3), 1997, pp. 360-368
A simulation of the charge collection mechanism in silicon pixel detec
tors has been performed. Effects due to diffusion, delta-rays producti
on and magnetic field have been taken into account. The VLSI cells res
ponse has been modelled assuming Gaussian noise and Gaussian threshold
variation centred on typical values. A 5 x 5, 100 mu m pitch, square
pixel array, with the central pixel (surrounded by its 8 first and 16
second neighbours) uniformly irradiated by MIPs with different inciden
t angles, has been considered. Its geometry has been varied looking fo
r cluster distribution and attainable spatial resolution for both digi
tal and analogue read out. The simulations have been compared with the
results obtained with digital and analogue hybrid silicon pixel detec
tors and show, in the limits of the Monte-Carlo uncertainties, a good
agreement with experimental data.