INORGANIC ELECTRET MEMBRANE FOR A SILICON MICROPHONE

Citation
C. Thielemann et G. Hess, INORGANIC ELECTRET MEMBRANE FOR A SILICON MICROPHONE, Sensors and actuators. A, Physical, 61(1-3), 1997, pp. 352-355
Citations number
8
Categorie Soggetti
Engineering, Eletrical & Electronic","Instument & Instrumentation
ISSN journal
09244247
Volume
61
Issue
1-3
Year of publication
1997
Pages
352 - 355
Database
ISI
SICI code
0924-4247(1997)61:1-3<352:IEMFAS>2.0.ZU;2-5
Abstract
A new inorganic electret material is presented for application in micr omachined sensors, wherever a static electric field is needed to repla ce an external voltage supply, e.g., for airborne sound transducers. T he double-layer system of thermal silicon dioxide/CVD nitride is an ex cellent candidate for a silicon-based electret material. An inorganic electret membrane of this material is suggested for application in a s ilicon microphone. The processing of the electret membrane chip is des cribed and results of stress-compensated electret layers with good cha rge stability are presented.