A new encapsulation technique to seal a vacuum-tube microcavity hermet
ically at low pressures, based on aluminium evaporation, is presented
and its performance is compared to conventional low-pressure chemical
vapour deposition (LPCVD) reactive sealing. The microdiode consists of
an in-cavity recessed single-crystalline silicon cathode tip above wh
ich a polycrystalline silicon anode is suspended on a silicon-rich nit
ride layer. The diode cavity is cleared from the sacrificial oxide in
buffered HF through the horizontal etch-access channels between the po
lysilicon anode and the silicon-rich nitride isolation layer, Vacuum s
ealing of the cavity using LPCVD polycrystalline silicon results in po
lysilicon deposits (>50 nm) inside the cavity, and thus in a non-accep
table degradation of the cathode-tip curvature. When sealing is perfor
med using aluminium evaporation, no deposits inside the cavity are obs
erved and pressures below 10(-3) Pa can be expected. Applications of t
he technique presented are not restricted to micro vacuum diodes, but
also include various types of hermetically seated micromechanical stru
ctures, where deposits inside the sealed cavity are undesirable.