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Results: 101-125/15550
Authors:
HAIDAR J
Citation: J. Haidar, A THEORETICAL-MODEL FOR GAS METAL ARC-WELDING AND GAS TUNGSTEN ARC-WELDING, Journal of applied physics, 84(7), 1998, pp. 3518-3529
Authors:
HAIDAR J
Citation: J. Haidar, PREDICTIONS OF METAL DROPLET FORMATION IN GAS METAL ARC-WELDING - II, Journal of applied physics, 84(7), 1998, pp. 3530-3540
Authors:
BOEUF JP
GARRIGUES L
Citation: Jp. Boeuf et L. Garrigues, LOW-FREQUENCY OSCILLATIONS IN A STATIONARY PLASMA THRUSTER, Journal of applied physics, 84(7), 1998, pp. 3541-3554
Authors:
LAW ME
HADDARA YM
JONES KS
Citation: Me. Law et al., EFFECT OF THE SILICON OXIDE INTERFACE ON INTERSTITIALS - DI-INTERSTITIAL RECOMBINATION/, Journal of applied physics, 84(7), 1998, pp. 3555-3560
THERMAL DONOR FORMATION AND ANNIHILATION AT TEMPERATURES ABOVE 500-DEGREES-C IN CZOCHRALSKI-GROWN SI
Authors:
GOTZ W
PENSL G
ZULEHNER W
NEWMAN RC
MCQUAID SA
Citation: W. Gotz et al., THERMAL DONOR FORMATION AND ANNIHILATION AT TEMPERATURES ABOVE 500-DEGREES-C IN CZOCHRALSKI-GROWN SI, Journal of applied physics, 84(7), 1998, pp. 3561-3568
Authors:
LONDOS CA
SARLIS NV
FYTROS LG
Citation: Ca. Londos et al., INFRARED STUDIES OF DEFECTS FORMED DURING POSTIRRADIATION ANNEALS OF CZOCHRALSKI SILICON, Journal of applied physics, 84(7), 1998, pp. 3569-3573
Authors:
TAMURA S
HORIE Y
Citation: S. Tamura et Y. Horie, DISCRETE MESO-DYNAMIC SIMULATION OF THERMAL-EXPLOSION IN SHEAR BANDS, Journal of applied physics, 84(7), 1998, pp. 3574-3580
Authors:
DEFILPO G
LANZO J
NICOLETTA FP
CHIDICHIMO G
Citation: G. Defilpo et al., MONOMER-LIQUID CRYSTAL EMULSIONS FOR SWITCHABLE FILMS, Journal of applied physics, 84(7), 1998, pp. 3581-3585
Authors:
SHAW D
SHAW TL
Citation: D. Shaw et Tl. Shaw, A LEAST-SQUARES METHOD FOR FITTING DIFFUSION DATA TO THE WHIPPLE SUZUOKA EQUATIONS FOR GRAIN-BOUNDARY DIFFUSION/, Journal of applied physics, 84(7), 1998, pp. 3586-3592
Authors:
ROUSSEAU PM
GRIFFIN PB
FANG WT
PLUMMER JD
Citation: Pm. Rousseau et al., ARSENIC DEACTIVATION ENHANCED DIFFUSION - A TIME, TEMPERATURE, AND CONCENTRATION STUDY, Journal of applied physics, 84(7), 1998, pp. 3593-3601
THERMAL-DIFFUSIVITY MEASUREMENT OF SOLID MATERIALS BY THE PULSED PHOTOTHERMAL DISPLACEMENT TECHNIQUE
Authors:
BENNIS GL
VYAS R
GUPTA R
ANG S
BROWN WD
Citation: Gl. Bennis et al., THERMAL-DIFFUSIVITY MEASUREMENT OF SOLID MATERIALS BY THE PULSED PHOTOTHERMAL DISPLACEMENT TECHNIQUE, Journal of applied physics, 84(7), 1998, pp. 3602-3610
Authors:
SNOEKS E
MARSHALL T
PETRUZZELLO J
PASHLEY MD
CHAO LL
CARGILL GS
Citation: E. Snoeks et al., DIFFUSION LENGTHS OF CARRIERS IN N-TYPE AND P-TYPE ZNMGSSE CLADDING LAYERS OF GREEN LASER-DIODES, Journal of applied physics, 84(7), 1998, pp. 3611-3616
Authors:
YAN W
KOMVOPOULOS K
Citation: W. Yan et K. Komvopoulos, CONTACT ANALYSIS OF ELASTIC-PLASTIC FRACTAL SURFACES, Journal of applied physics, 84(7), 1998, pp. 3617-3624
Authors:
HARDER KU
MENZEL D
WIDMER T
SCHOENES J
Citation: Ku. Harder et al., STRUCTURE, MAGNETIC, AND MAGNETOOPTICAL PROPERTIES OF MNBI FILMS GROWN ON QUARTZ AND (001) GAAS SUBSTRATES, Journal of applied physics, 84(7), 1998, pp. 3625-3629
Authors:
SHEN GH
CHEN JC
LOU CH
CHENG SL
CHEN LJ
Citation: Gh. Shen et al., THE GROWTH OF PINHOLE-FREE EPITAXIAL DYSI2-X FILMS ON ATOMICALLY CLEAN SI(111), Journal of applied physics, 84(7), 1998, pp. 3630-3635
Authors:
HUANG HC
GILMER GH
DELARUBIA TD
Citation: Hc. Huang et al., AN ATOMISTIC SIMULATOR FOR THIN-FILM DEPOSITION IN 3 DIMENSIONS, Journal of applied physics, 84(7), 1998, pp. 3636-3649
Authors:
FERREIRA SO
ABRAMOF E
RAPPL PHO
UETA AY
CLOSS H
BOSCHETTI C
MOTISUKE P
BANDEIRA IN
Citation: So. Ferreira et al., RECIPROCAL SPACE MAPS OF PBTE SNTE SUPERLATTICES/, Journal of applied physics, 84(7), 1998, pp. 3650-3653
Authors:
BARRIERE AS
CESAIRE T
HIRSCH L
PORTE B
VILLENUEVE G
LEZAMA L
ROJO T
BARBERIS GE
Citation: As. Barriere et al., ENVIRONMENT OF ER IN EPITAXIAL CA1-XERXF2-FILMS USING LOCAL TECHNIQUES(X THIN), Journal of applied physics, 84(7), 1998, pp. 3654-3657
Authors:
ICHIKAWA S
SANADA N
UTSUMI N
FUKUDA Y
Citation: S. Ichikawa et al., SURFACE-STRUCTURES AND ELECTRONIC STATES OF CLEAN AND (NH4)(2)S-X -TREATED, INAS(111)A AND (111)B, Journal of applied physics, 84(7), 1998, pp. 3658-3663
Authors:
VOSSMEYER T
JIA S
DELONNO E
DIEHL MR
KIM SH
PENG X
ALIVISATOS AP
HEATH JR
Citation: T. Vossmeyer et al., COMBINATORIAL APPROACHES TOWARD PATTERNING NANOCRYSTALS, Journal of applied physics, 84(7), 1998, pp. 3664-3670
Authors:
SUN Q
YE L
XIE X
Citation: Q. Sun et al., ELECTRONIC-PROPERTIES OF K DOPED NA-FORMED LINDE TYPE-A ZEOLITE, Journal of applied physics, 84(7), 1998, pp. 3671-3675
Authors:
RACK PD
LEWIS JS
HOLLOWAY PH
PARK W
WAGNER BK
SUMMERS CJ
Citation: Pd. Rack et al., BOUND EXCITON LUMINESCENCE IN TE-DOPED SRS, Journal of applied physics, 84(7), 1998, pp. 3676-3683
Authors:
SCHENK A
Citation: A. Schenk, FINITE-TEMPERATURE FULL RANDOM-PHASE-APPROXIMATION MODEL OF BAND-GAP NARROWING FOR SILICON DEVICE SIMULATION, Journal of applied physics, 84(7), 1998, pp. 3684-3695
Authors:
KIM KJ
LEE MH
BAHNG JH
SHIM K
CHOE BD
Citation: Kj. Kim et al., OPTICAL-CONSTANTS AND ELECTRONIC INTERBAND-TRANSITIONS OF DISORDERED GAAS1-XPX ALLOYS, Journal of applied physics, 84(7), 1998, pp. 3696-3699
Authors:
BUENO PR
PIANARO SA
PEREIRA EC
BULHOES LOS
LONGO E
VARELA JA
Citation: Pr. Bueno et al., INVESTIGATION OF THE ELECTRICAL-PROPERTIES OF SNO2 VARISTOR SYSTEM USING IMPEDANCE SPECTROSCOPY, Journal of applied physics, 84(7), 1998, pp. 3700-3705