Table of contents of journal:

Results: 8

Materials properties and characterization of SiC

Authors: Jarrendahl, K Davis, RF

Citation: K. Jarrendahl et Rf. Davis, Materials properties and characterization of SiC, SEM SEMIMET, 52, 1998, pp. 1-20

SiC fabrication technology: Growth and doping

Authors: Dmitriev, VA Spencer, MG

Citation: Va. Dmitriev et Mg. Spencer, SiC fabrication technology: Growth and doping, SEM SEMIMET, 52, 1998, pp. 21-75

Building blocks for SiC devices: Ohmic contacts, Schottky contacts, and p-n junctions

Authors: Saxena, V Steckl, AJ

Citation: V. Saxena et Aj. Steckl, Building blocks for SiC devices: Ohmic contacts, Schottky contacts, and p-n junctions, SEM SEMIMET, 52, 1998, pp. 77-160

SiC transistors

Authors: Shur, MS

Citation: Ms. Shur, SiC transistors, SEM SEMIMET, 52, 1998, pp. 161-193

SiC for applications in high-power electronics

Authors: Brandt, CD Clarke, RC Siergiej, RR Casady, JB Sriram, S Agarwal, AK Morse, AW

Citation: Cd. Brandt et al., SiC for applications in high-power electronics, SEM SEMIMET, 52, 1998, pp. 195-236

SiC microwave devices

Authors: Trew, RJ

Citation: Rj. Trew, SiC microwave devices, SEM SEMIMET, 52, 1998, pp. 237-282

SiC-based UV photodiodes and light-emitting diodes

Authors: Edmond, J Kong, H Negley, G Leonard, M Doverspike, K Weeks, W Suvorov, A Waltz, D Carter, C

Citation: J. Edmond et al., SiC-based UV photodiodes and light-emitting diodes, SEM SEMIMET, 52, 1998, pp. 283-306

Beyond silicon carbide! III-V nitride based heterostructures and devices

Authors: Morkoc, H

Citation: H. Morkoc, Beyond silicon carbide! III-V nitride based heterostructures and devices, SEM SEMIMET, 52, 1998, pp. 307-394

Risultati: 1-8 |