AAAAAA

   
Results: 1-11 |

Table of contents of journal:

Results: 11

Authors: Molnar, RJ
Citation: Rj. Molnar, Hydride vapor phase epitaxial growth of III-V nitrides, SEM SEMIMET, 57, 1999, pp. 1-31

Authors: Moustakas, TD
Citation: Td. Moustakas, Growth of III-V nitrides by molecular beam epitaxy, SEM SEMIMET, 57, 1999, pp. 33-128

Authors: Liliental-Weber, Z
Citation: Z. Liliental-weber, Defects in bulk GaN and homoepitaxial layers, SEM SEMIMET, 57, 1999, pp. 129-156

Authors: Van de Walle, CG Johnson, NM
Citation: Cg. Van De Walle et Nm. Johnson, Hydrogen in III-V nitrides, SEM SEMIMET, 57, 1999, pp. 157-184

Authors: Gotz, W Johnson, NM
Citation: W. Gotz et Nm. Johnson, Characterization of dopants and deep level defects in gallium nitride, SEM SEMIMET, 57, 1999, pp. 185-207

Authors: Gil, B
Citation: B. Gil, Stress effects on optical properties, SEM SEMIMET, 57, 1999, pp. 209-274

Authors: Kisielowski, C
Citation: C. Kisielowski, Strain in GaN thin films and heterostructures, SEM SEMIMET, 57, 1999, pp. 275-317

Authors: Miragliotta, JA Wickenden, DK
Citation: Ja. Miragliotta et Dk. Wickenden, Nonlinear optical properties of gallium nitride, SEM SEMIMET, 57, 1999, pp. 319-370

Authors: Meyer, BK
Citation: Bk. Meyer, Magnetic resonance investigations on group III-nitrides, SEM SEMIMET, 57, 1999, pp. 371-406

Authors: Shur, MS Khan, MA
Citation: Ms. Shur et Ma. Khan, GaN and AlGaN ultraviolet detectors, SEM SEMIMET, 57, 1999, pp. 407-439

Authors: Qiu, CH Pankove, JI Rossington, C
Citation: Ch. Qiu et al., III-V nitride-based X-ray detectors, SEM SEMIMET, 57, 1999, pp. 441-465
Risultati: 1-11 |