Characterization of dopants and deep level defects in gallium nitride

Authors
Gotz, W Johnson, NM
Citation
W. Gotz et Nm. Johnson, Characterization of dopants and deep level defects in gallium nitride, SEM SEMIMET, 57, 1999, pp. 185-207
Citations number
41
Categorie Soggetti
Current Book Contents
Journal title
GALLIUM NITRIDE (GAN) II → ACNP
ISSN journal
00808784
Volume
57
Year of publication
1999
Pages
185 - 207
Database
ISI
SICI code
0080-8784(1999)57:<185:CODADL>2.0.ZU;2-I