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Results: 26-50/180
Authors:
ROBERTSON N
AWAGA K
PARSONS S
KOBAYASHI A
UNDERHILL AE
Citation: N. Robertson et al., [TTF](2)[FE(TDAS)(2)] - A MOLECULAR CONDUCTOR CONTAINING MAGNETIC COUNTERIONS, Advanced materials for optics and electronics, 8(2), 1998, pp. 93-96
Authors:
BOCER K
STARODUB VA
SWIETLIK R
Citation: K. Bocer et al., MELTING OF CONDUCTING ORGANIC COMPOSITES BASED ON TCNQ AND METHYL-TCNQ SALTS STUDIES BY IR SPECTROSCOPY, Advanced materials for optics and electronics, 8(2), 1998, pp. 97-99
Authors:
WALTON DJ
CAMPBELL CJ
RICHARDS PG
HEPTINSTALL J
Citation: Dj. Walton et al., ELECTROSYNTHETIC IMMOBILIZATION OF PROTEINS FOR BIOANALYSIS, Advanced materials for optics and electronics, 8(2), 1998, pp. 101-105
Authors:
FERNANDEZ AM
Citation: Am. Fernandez, OPTIMIZATION OF THE ELECTROCHEMICAL BATH FOR GROWING DEVICE-QUALITY CUINSE2 THIN-FILMS, Advanced materials for optics and electronics, 8(1), 1998, pp. 1-8
Authors:
CIORGA M
BRYJA L
MISIEWICZ J
PASZKIEWICZ R
PANEK M
PASZKIEWICZ B
TLACZALA M
Citation: M. Ciorga et al., PHOTOLUMINESCENCE MEASUREMENTS OF GAAS GROWN BY LIQUID-PHASE EPITAXY FROM GA-BI SOLUTION, Advanced materials for optics and electronics, 8(1), 1998, pp. 9-12
Authors:
ALEXANDROV SE
KOVALGIN AY
Citation: Se. Alexandrov et Ay. Kovalgin, REMOTE PLASMA-ENHANCED CVD OF SILICON-NITRIDE FILMS - EFFECTS OF DILUTING NITROGEN WITH ARGON - PART I - EFFECT ON NITROGEN PLASMA PARAMETERS STUDIED BY EMISSION-SPECTROSCOPY, Advanced materials for optics and electronics, 8(1), 1998, pp. 13-22
Authors:
ALEXANDROV SE
HITCHMAN ML
KOVALGIN AY
Citation: Se. Alexandrov et al., REMOTE PLASMA-ENHANCED CVD OF SILICON-NITRIDE FILMS - EFFECTS OF DILUTING NITROGEN WITH ARGON - PART II - EFFECT OF NITROGEN PLASMA PARAMETERS ON LAYER CHARACTERISTICS, Advanced materials for optics and electronics, 8(1), 1998, pp. 23-29
Authors:
LANGER JJ
GALINSKI R
GIBINSKI T
Citation: Jj. Langer et al., ELECTRICALLY CONDUCTING AND FLUORISING SELF-ASSEMBLED MONOMOLECULAR LAYERS, Advanced materials for optics and electronics, 8(1), 1998, pp. 31-37
Authors:
GREEN M
OBRIEN P
Citation: M. Green et P. Obrien, THE USE OF AN ADDUCT IN IMPROVED SYNTHESES OF NANOPARTICULATE CHALCOGENIDE SEMICONDUCTORS CONTAINING CADMIUM, Advanced materials for optics and electronics, 7(6), 1997, pp. 277-279
Authors:
MOREAU C
ANTONY R
MOLITON A
FRANCOIS B
Citation: C. Moreau et al., SENSITIVE THERMOELECTRIC-POWER AND CONDUCTIVITY MEASUREMENTS ON IMPLANTED POLYPARAPHENYLENE THIN-FILMS, Advanced materials for optics and electronics, 7(6), 1997, pp. 281-293
Authors:
LONGSTAFF KA
LEIGH DA
MUNN RW
Citation: Ka. Longstaff et al., STUDIES OF MULTIPLE-CHAIN ALKYLAMINOMETHYL P-CYANOPHENOL DERIVATIVES FOR LANGMUIR-BLODGETT-FILMS, Advanced materials for optics and electronics, 7(6), 1997, pp. 295-305
Authors:
SEK G
CIORGA M
MISIEWICZ J
RADZIEWICZ D
KORBUTOWICZ R
PANEK M
TLACZALA M
Citation: G. Sek et al., OPTICAL INVESTIGATIONS OF STRAINED INCAAS QUANTUM-WELLS, Advanced materials for optics and electronics, 7(6), 1997, pp. 307-310
Authors:
CHUNGGAZE M
MALIK MA
OBRIEN P
Citation: M. Chunggaze et al., DEPOSITION OF CADMIUM-SULFIDE THIN-FILMS FROM THE SINGLE-SOURCE PRECURSOR BIS(DIETHYLMONOTHIOCARBAMATO)CADMIUM(II) BY LOW-PRESSURE METALORGANIC CHEMICAL-VAPOR-DEPOSITION, Advanced materials for optics and electronics, 7(6), 1997, pp. 311-316
Authors:
JOYCE BA
ZHANG J
TAYLOR AG
XIE MH
FERNANDEZ JM
LEES AK
Citation: Ba. Joyce et al., IN-SITU STUDIES OF EPITAXIAL SILICON GROWTH BY GAS-SOURCE MOLECULAR-BEAM EPITAXY, Advanced materials for optics and electronics, 7(5), 1997, pp. 215-224
Authors:
RAMANA CV
HUSSAIN OM
Citation: Cv. Ramana et Om. Hussain, OPTICAL-ABSORPTION BEHAVIOR OF VANADIUM PENTOXIDE THIN-FILMS, Advanced materials for optics and electronics, 7(5), 1997, pp. 225-231
Authors:
DUFFY S
NOLAN PF
RUSHWORTH SA
LEESE AB
JONES AC
Citation: S. Duffy et al., THERMAL-STABILITY OF GROUP-13 METALORGANIC MOVPE AND CBE PRECURSORS, Advanced materials for optics and electronics, 7(5), 1997, pp. 233-240
Authors:
SEK G
MISIEWICZ J
CHENG TS
Citation: G. Sek et al., PHOTOREFLECTANCE SPECTROSCOPY OF LOW-DIMENSIONAL GAAS ALGAAS STRUCTURES/, Advanced materials for optics and electronics, 7(5), 1997, pp. 241-247
Authors:
SHAFEEV GA
AUTRIC M
MARINE W
Citation: Ga. Shafeev et al., INFLUENCE OF LASER WAVELENGTH ON ACTIVATION OF ZRO2 CERAMICS FOR ELECTROLESS METAL PLATING, Advanced materials for optics and electronics, 7(5), 1997, pp. 249-254
Authors:
DAVIDENKO NA
KUVSHINSKY NG
Citation: Na. Davidenko et Ng. Kuvshinsky, DISSOCIATION OF ELECTRON-HOLE PAIRS INTERACTING WITH TRIPLET EXCITONSIN AMORPHOUS MOLECULAR SEMICONDUCTORS, Advanced materials for optics and electronics, 7(5), 1997, pp. 255-261
Authors:
ADAMATZKY AI
Citation: Ai. Adamatzky, UNIVERSAL COMPUTATION IN EXCITABLE MEDIA - THE 2(+) MEDIUM, Advanced materials for optics and electronics, 7(5), 1997, pp. 263-272
Authors:
RAMBIDI NG
MAXIMYCHEV AV
Citation: Ng. Rambidi et Av. Maximychev, MOLECULAR IMAGE-PROCESSING DEVICES BASED ON CHEMICAL-REACTION SYSTEMS.5. PROCESSING IMAGES WITH SEVERAL LEVELS OF BRIGHTNESS AND SOME APPLICATION POTENTIALITIES, Advanced materials for optics and electronics, 7(4), 1997, pp. 161-170
Authors:
RAMBIDI NG
MAXIMYCHEV AV
Citation: Ng. Rambidi et Av. Maximychev, MOLECULAR IMAGE-PROCESSING DEVICES BASED ON CHEMICAL-REACTION SYSTEMS.6. PROCESSING HALF-TONE IMAGES AND NEURAL-NETWORK ARCHITECTURE OF EXCITABLE MEDIA, Advanced materials for optics and electronics, 7(4), 1997, pp. 171-182
Authors:
NISHIZAWA J
KURABAYASHI T
Citation: J. Nishizawa et T. Kurabayashi, MONOMOLECULAR LAYER EPITAXY OF GAAS FOR IDEAL STATIC INDUCTION TRANSISTOR, Advanced materials for optics and electronics, 7(4), 1997, pp. 183-193
Authors:
RUSSELL MW
FREITAS JA
MOORE WJ
BUTLER JE
Citation: Mw. Russell et al., MORPHOLOGICAL EVOLUTION, RAMAN AND PHOTOLUMINESCENCE SPECTRA IN OPTICALLY TRANSPARENT CUBIC SILICON-CARBIDE, Advanced materials for optics and electronics, 7(4), 1997, pp. 195-206
Authors:
DAVIDENKO NA
KUVSHINSKY NG
SYROMYATNIKOV VG
FEDOROVA LN
Citation: Na. Davidenko et al., FEATURES OF THE EXCIPLEX MECHANISM OF CHARGE PHOTOGENERATION AMORPHOUS IN MOLECULAR SEMICONDUCTORS DOPED WITH THE DYE RHODAMINE 6G, Advanced materials for optics and electronics, 7(4), 1997, pp. 207-211