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Results: 1-25/3121
Authors:
Krasil'nik, ZF
Citation: Zf. Krasil'Nik, Semiconductor nanostructures: optical properties and applications, IAN FIZ, 65(2), 2001, pp. 168-170
Authors:
Savenko, VN
Nasimov, DA
Latyshev, AV
Aseev, AL
Citation: Vn. Savenko et al., The odering of gold nanoclusters on the silicon surface, IAN FIZ, 65(2), 2001, pp. 171-175
Authors:
Lifshits, VG
Azatyan, SG
Gavrilyk, YL
Luniakov, YV
Saranin, AA
Zotov, AV
Tsukanov, DA
Citation: Vg. Lifshits et al., Two-dimensional structures on silicon surface, IAN FIZ, 65(2), 2001, pp. 176-179
Authors:
Bolhovityanov, YB
Pchelyakov, OP
Sokolov, LV
Nikiforov, AI
Voigtlander, B
Citation: Yb. Bolhovityanov et al., Self-organizing and self-assembling of GexSi1-x quantum dots - mechanisms of formation by MBE, IAN FIZ, 65(2), 2001, pp. 180-186
Authors:
Dvurechenskii, AV
Yakimov, AI
Citation: Av. Dvurechenskii et Ai. Yakimov, Interaction effects in an arrays of Ge/Si quantum dots, IAN FIZ, 65(2), 2001, pp. 187-191
Authors:
Zverev, AV
Neizvestny, IG
Shwartz, NL
Yanovitskaya, ZS
Citation: Av. Zverev et al., Simulation of pores sealing during homoepitaxy on Si(111) surface, IAN FIZ, 65(2), 2001, pp. 192-195
Authors:
Brunev, DV
Neizvestny, IG
Shwartz, NL
Yanovitskaya, ZS
Citation: Dv. Brunev et al., Influence of atomic interlayer hops on 3D island growth (Simulation), IAN FIZ, 65(2), 2001, pp. 196-200
Authors:
Avrutin, VS
Vyatkin, AF
Izyumskaya, NF
Pustovit, AN
Kalinushkin, VP
Stavrovsky, DB
Uvarov, OV
Yuryev, VA
Citation: Vs. Avrutin et al., IR absorption in SiGe/Si heterostructures, IAN FIZ, 65(2), 2001, pp. 201-202
Authors:
Svetlov, SP
Shengurov, VG
Chalkov, VJ
Krasilnik, ZF
Andreev, BA
Drozdov, YN
Citation: Sp. Svetlov et al., Si1-xGex/Si(100) heterostructures obtained by sublimation molecular beam epitaxi of Si in GeH4, IAN FIZ, 65(2), 2001, pp. 203-206
Authors:
Yakunin, MV
Alshanskii, GA
Arapov, YG
Neverov, VN
Kuznetsov, OA
Citation: Mv. Yakunin et al., Quantum magnetotransport in the double-quantum-well hole system inside a wide Ge1-xSix/Ge/Ge1-xSix potential well, IAN FIZ, 65(2), 2001, pp. 207-210
Authors:
Boltaev, AP
Loiko, NN
Rzaev, MM
Sibeldin, NN
Citation: Ap. Boltaev et al., Energy levels in single quantum well in the presence of strong electric field, IAN FIZ, 65(2), 2001, pp. 211-213
Authors:
Ustinov, VM
Zhukov, AE
Kovsh, AR
Maleev, NA
Mikhrin, SS
Volovik, BV
Musikhin, YG
Tsatsul'nikov, AF
Maximov, MV
Shernyakov, YM
Alferov, ZI
Ledentsov, NN
Bimberg, D
Lott, J
Citation: Vm. Ustinov et al., Quantum dot lasers of NIR range based on GaAs, IAN FIZ, 65(2), 2001, pp. 214-218
Authors:
Cirlin, GE
Petrov, VN
Polyakov, NK
Egorov, VA
Samsonenko, YB
Volovik, BV
Denisov, DV
Ustinov, VM
Alferov, ZL
Ledentsov, NN
Bimberg, D
Zakharov, ND
Werner, P
Citation: Ge. Cirlin et al., Quantum dot multilayer structures in InAs/GaAs and InAs/Si systems, IAN FIZ, 65(2), 2001, pp. 219-222
Authors:
Motsnyi, FV
Citation: Fv. Motsnyi, Study of emission recombination in GaAs/AlxGa1-xAs heterostructures with single quantum wells, IAN FIZ, 65(2), 2001, pp. 223-226
Authors:
Afonenko, AA
Kononenko, VK
Manak, IS
Citation: Aa. Afonenko et al., Dynamics of multiwavelength generation in quantum-well heterolasers, IAN FIZ, 65(2), 2001, pp. 227-229
Authors:
Vorobjev, LE
Zegrya, GG
Firsov, DA
Citation: Le. Vorobjev et al., Mid-infrared range Augerlaser, based on intersubband transitions of carriers in quantum wells, IAN FIZ, 65(2), 2001, pp. 230-232
Authors:
Andreev, BA
Gavrilenko, VI
Erofeeva, IV
Kawano, Y
Komiyama, C
Korotkov, AL
Yablonskii, AN
Citation: Ba. Andreev et al., Change of a spectral band for GaAs/AlGaAs electron cyclotron resonance quantum Hall effect detector, IAN FIZ, 65(2), 2001, pp. 233-235
Authors:
Sablikov, VA
Citation: Va. Sablikov, Electron transport in quantum wires: possible current instability mechanisms, IAN FIZ, 65(2), 2001, pp. 236-239
Authors:
Yassievich, IN
Kagan, MS
Chao, KA
Citation: In. Yassievich et al., Resonant states and terahertz emission, IAN FIZ, 65(2), 2001, pp. 240-242
Authors:
Burbaev, TM
Kurbatov, VA
Kurochkin, NE
Kholodnov, VA
Citation: Tm. Burbaev et al., Suppression of the impact ionization by secondary carriers in avalanche photosensitive MIS-like structures, IAN FIZ, 65(2), 2001, pp. 243-245
Authors:
Shastin, VN
Zvonkov, BN
Zhukavin, RK
Orlova, EE
Pavlov, SG
Citation: Vn. Shastin et al., Population inversion and THz amplification based on the optically pumped coulomb centers in MQW, IAN FIZ, 65(2), 2001, pp. 246-248
Authors:
Aleshkin, VY
Andreev, BA
Gavrilenko, VI
Erofeeva, IV
Kozlov, DV
Kuznetsov, OA
Citation: Vy. Aleshkin et al., Resonant acceptors states in Ge/Ge1-xSix heterostructures with quantum wells, IAN FIZ, 65(2), 2001, pp. 249-251
Authors:
Bekin, NA
Shastin, VN
Citation: Na. Bekin et Vn. Shastin, 2D-hole intersubband transition THz amplification in GaAs/AlGaAs heterostructures under optical pumping, IAN FIZ, 65(2), 2001, pp. 252-255
Authors:
Romanov, YA
Romanova, YY
Citation: Ya. Romanov et Yy. Romanova, Terehertz field oscillations in semiconductor superlattices, IAN FIZ, 65(2), 2001, pp. 256-259
Authors:
Romanov, YA
Romanova, YY
Demidov, EV
Citation: Ya. Romanov et al., About transparency mechanisms of semiconductor superlattices, IAN FIZ, 65(2), 2001, pp. 260-263