Authors: NEMOV SA RAVICH YI PROSHIN VI ABAIDULINA TG

Citation: Sa. Nemov et al., TRANSPORT PHENOMENA IN THE SOLID-SOLUTION (PB0.78SN0.22)(0.97)IN0.03TE IN THE HOPPING CONDUCTION REGION, Semiconductors, 32(3), 1998, pp. 280-283

Authors: NEMOV SA PROSHIN VI ABAIDULINA TG

Citation: Sa. Nemov et al., INFLUENCE OF QUASI-LOCAL STATES OF IN ON DEFECT FORMATION IN PBTE, Semiconductors, 30(7), 1996, pp. 676-679

Authors: ABAIDULINA TG NEMOV SA PROSHIN VI RAVICH YI

Citation: Tg. Abaidulina et al., SEEBECK COEFFICIENT AND ELECTRON-ENERGY BAND IN (PB0.78SN0.22)(0.97)IN0.03TE SOLID-SOLUTIONS WITH ADDITIONAL DOPING IN THE RANGE OF THE HOPPING CONDUCTIVITY, Semiconductors, 30(12), 1996, pp. 1133-1134

Authors: ABAIDULINA TG ZHITINSKAYA MK NEMOV SA RAVICH YI

Citation: Tg. Abaidulina et al., EXPERIMENTAL-STUDY OF THE INTRINSIC DEFECTS IN DOPED BISMUTH TELLURIDE BY ELECTRICAL METHODS, Semiconductors, 28(9), 1994, pp. 899-900

Authors: ZHITINSKAYA MK NEMOV SA RAVICH YI ABAIDULINA TG KOMPANEETS VV BUSHMARINA GS DRABKIN IA

Citation: Mk. Zhitinskaya et al., ELECTROPHYSICAL PROPERTIES OF INDIUM-DOPED BISMUTH TELLURIDE, Semiconductors, 27(10), 1993, pp. 952-954