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Results:
1-11
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Results: 11
Authors:
FIEGNA C
ABRAMO A
Citation: C. Fiegna et A. Abramo, ANALYSIS OF QUANTUM EFFECTS IN NONUNIFORMLY DOPED MOS STRUCTURES, I.E.E.E. transactions on electron devices, 45(4), 1998, pp. 877-880
Authors:
BORDONE P
ABRAMO A
BRUNETTI R
PASCOLI M
JACOBONI C
Citation: P. Bordone et al., WIGNER FUNCTION FOR OPEN SYSTEMS WITH ELECTRON-PHONON INTERACTION, Physica status solidi. b, Basic research, 204(1), 1997, pp. 303-305
Authors:
FERRETTI I
ABRAMO A
BRUNETTI R
JACOBONI C
Citation: I. Ferretti et al., FULL-BAND MONTE-CARLO ANALYSIS OF HOT-CARRIER LIGHT-EMISSION IN GAAS, Physica status solidi. b, Basic research, 204(1), 1997, pp. 538-540
Authors:
MARQUES A
BRENDA E
ABRAMO A
AMARANTE M
Citation: A. Marques et al., ABDOMINOPLASTY WITHOUT PLICATION OF THE APONEUROSIS, European journal of plastic surgery, 19(2), 1996, pp. 89-91
Authors:
ABRAMO A
BUDE J
VENTURI F
PINTO MR
Citation: A. Abramo et al., MOBILITY SIMULATION OF A NOVEL SI SIGE FET STRUCTURE/, IEEE electron device letters, 17(2), 1996, pp. 59-61
ELECTRON-ENERGY DISTRIBUTIONS IN SILICON STRUCTURES AT LOW APPLIED VOLTAGES AND HIGH ELECTRIC-FIELDS
Authors:
ABRAMO A
FIEGNA C
Citation: A. Abramo et C. Fiegna, ELECTRON-ENERGY DISTRIBUTIONS IN SILICON STRUCTURES AT LOW APPLIED VOLTAGES AND HIGH ELECTRIC-FIELDS, Journal of applied physics, 80(2), 1996, pp. 889-893
Authors:
ABRAMO A
CASARINI P
JACOBONI C
Citation: A. Abramo et al., PHASE TIME FOR COHERENT TRANSPORT IN 2-DIMENSIONAL STRUCTURES, Applied physics letters, 69(5), 1996, pp. 629-631
Authors:
ABRAMO A
BRUNETTI R
JACOBONI C
VENTURI F
SANGIORGI E
Citation: A. Abramo et al., A MULTIBAND MONTE-CARLO APPROACH TO COULOMB INTERACTION FOR DEVICE ANALYSIS, Journal of applied physics, 76(10), 1994, pp. 5786-5794
Authors:
ABRAMO A
BAUDRY L
BRUNETTI R
CASTAGNE R
CHAREF M
DESSENNE F
DOLLFUS P
DUTTON R
ENGL WL
FAUQUEMBERGUE R
FIEGNA C
FISCHETTI MV
GALDIN S
GOLDSMAN N
HACKEL M
HAMAGUCHI C
HESS K
HENNACY K
HESTO P
HIGMAN JM
IIZUKA T
JUNGEMANN C
KAMAKURA Y
KOSINA H
KUNIKIYO T
LAUX SE
LIM HC
MAZIAR C
MIZUNO H
PEIFER HJ
RAMASWAMY S
SANO N
SCORBOHACI PG
SELBERHERR S
TAKENAKA M
TANG TW
TANIGUCHI K
THOBEL JL
THOMA R
TOMIZAWA K
TOMIPZAWA M
VOGELSANG T
WANG SL
WANG XL
YAO CS
YODER PD
YOSHII A
Citation: A. Abramo et al., A COMPARISON OF NUMERICAL-SOLUTIONS OF THE BOLTZMANN TRANSPORT-EQUATION FOR HIGH-ENERGY ELECTRON-TRANSPORT SILICON, I.E.E.E. transactions on electron devices, 41(9), 1994, pp. 1646-1654
Authors:
ABRAMO A
VENTURI F
SANGIORGI E
HIGMAN JM
RICCO B
Citation: A. Abramo et al., A NUMERICAL-METHOD TO COMPUTE ISOTROPIC BAND MODELS FROM ANISOTROPIC SEMICONDUCTOR BAND STRUCTURES, IEEE transactions on computer-aided design of integrated circuits and systems, 12(9), 1993, pp. 1327-1336
Authors:
ABRAMO A
VENTURI F
SANGIORGI E
FIEGNA C
RICCO B
BRUNETTI R
QUADE W
JACOBONI C
Citation: A. Abramo et al., A MULTIBAND MODEL FOR HOLE TRANSPORT IN SILICON AT HIGH-ENERGIES, Semiconductor science and technology, 7(3B), 1992, pp. 597-600
Risultati:
1-11
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