ANALYSIS OF QUANTUM EFFECTS IN NONUNIFORMLY DOPED MOS STRUCTURES

Authors
FIEGNA C ABRAMO A
Citation
C. Fiegna et A. Abramo, ANALYSIS OF QUANTUM EFFECTS IN NONUNIFORMLY DOPED MOS STRUCTURES, I.E.E.E. transactions on electron devices, 45(4), 1998, pp. 877-880
Citations number
12
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied
Journal title
I.E.E.E. transactions on electron devices → ACNP
ISSN journal
00189383
Volume
45
Issue
4
Year of publication
1998
Pages
877 - 880
Database
ISI
SICI code
0018-9383(1998)45:4<877:AOQEIN>2.0.ZU;2-Z
Abstract
This paper presents results from the self-consistent solution of Schor dinger and Poisson equations obtained in one-dimensional (1-D) nonunif ormly doped MOS structures suitable for the fabrication of very short transistors, Different issues are considered and investigated, includi ng quantum-induced threshold voltage shifts, low-field electron effect ive mobility and gate-to-channel capacitance. The reported results giv e indications for the optimization of n-MOS channel doping profiles su itable for the fabrication of ultrashort MOSFET's.