AAAAAA
Results: 1-25/2122
Authors:
HAFIZI M
Citation: M. Hafizi, NEW SUBMICRON HBT IC TECHNOLOGY DEMONSTRATES ULTRA-FAST, LOW-POWER INTEGRATED-CIRCUITS, I.E.E.E. transactions on electron devices, 45(9), 1998, pp. 1862-1868
Authors:
BOOS JB
KRUPPA W
BENNETT BR
PARK D
KIRCHOEFER SW
BASS R
DIETRICH HB
Citation: Jb. Boos et al., ALSB INAS HEMTS FOR LOW-VOLTAGE, HIGH-SPEED APPLICATIONS/, I.E.E.E. transactions on electron devices, 45(9), 1998, pp. 1869-1875
Authors:
LIPSEY RE
JONES SH
Citation: Re. Lipsey et Sh. Jones, ACCURATE DESIGN EQUATIONS FOR 50-600 GHZ GAAS SCHOTTKY DIODE VARACTORFREQUENCY DOUBLERS, I.E.E.E. transactions on electron devices, 45(9), 1998, pp. 1876-1882
Authors:
SOMERVILLE MH
DELALAMO JA
SAUNIER P
Citation: Mh. Somerville et al., OFF-STATE BREAKDOWN IN POWER PHEMTS - THE IMPACT OF THE SOURCE, I.E.E.E. transactions on electron devices, 45(9), 1998, pp. 1883-1889
Authors:
GUNAPALA SD
BANDARA SV
LIU JK
HONG W
SUNDARAM M
MAKER PD
MULLER RE
SHOTT CA
CARRALEJO R
Citation: Sd. Gunapala et al., LONG-WAVELENGTH 640 X 486 GAAS ALGAAS QUANTUM-WELL INFRARED PHOTODETECTOR SNAP-SHOT CAMERA/, I.E.E.E. transactions on electron devices, 45(9), 1998, pp. 1890-1895
UNCOOLED THERMOPILE INFRARED DETECTOR LINEAR ARRAYS WITH DETECTIVITY GREATER-THAN 10(9) CMHZ(1 2)/W/
Authors:
FOOTE MC
JONES EW
CAILLAT T
Citation: Mc. Foote et al., UNCOOLED THERMOPILE INFRARED DETECTOR LINEAR ARRAYS WITH DETECTIVITY GREATER-THAN 10(9) CMHZ(1 2)/W/, I.E.E.E. transactions on electron devices, 45(9), 1998, pp. 1896-1902
Authors:
MAJKUSIAK B
Citation: B. Majkusiak, EXPERIMENTAL AND THEORETICAL-STUDY OF THE CURRENT-VOLTAGE CHARACTERISTICS OF THE MISIM TUNNEL TRANSISTOR, I.E.E.E. transactions on electron devices, 45(9), 1998, pp. 1903-1911
Authors:
SUN WT
LIAW MC
HSIEH KC
HSU CCH
Citation: Wt. Sun et al., IMPACT OF NITROGEN (N-2(-STABILITY OF COBALT SILICIDE FORMED ON POLYSILICON GATE()) IMPLANTATION INTO POLYSILICON GATE ON THERMAL), I.E.E.E. transactions on electron devices, 45(9), 1998, pp. 1912-1919
Authors:
CHEN TP
LI S
FUNG S
LO KF
Citation: Tp. Chen et al., INTERFACE-TRAP GENERATION BY FN INJECTION UNDER DYNAMIC OXIDE FIELD STRESS, I.E.E.E. transactions on electron devices, 45(9), 1998, pp. 1920-1926
Authors:
KAO CH
LAI CS
LEE CL
Citation: Ch. Kao et al., THE TEOS OXIDE DEPOSITED ON PHOSPHORUS IN-SITU POCL3 DOPED POLYSILICON WITH RAPID THERMAL ANNEALING IN N2O/, I.E.E.E. transactions on electron devices, 45(9), 1998, pp. 1927-1933
Authors:
SUBRAMANIAN V
SARASWAT KC
Citation: V. Subramanian et Kc. Saraswat, HIGH-PERFORMANCE GERMANIUM-SEEDED LATERALLY CRYSTALLIZED TFTS FOR VERTICAL DEVICE INTEGRATION, I.E.E.E. transactions on electron devices, 45(9), 1998, pp. 1934-1939
Authors:
MATSUMOTO S
HIRAOKA Y
ISHIYAMA T
SAKAI T
YACHI T
YAMADA I
ITO A
ARIMOTO Y
Citation: S. Matsumoto et al., STUDY ON THE DEVICE CHARACTERISTICS OF A QUASI-SOI POWER MOSFET FABRICATED BY REVERSED SILICON-WAFER DIRECT BONDING, I.E.E.E. transactions on electron devices, 45(9), 1998, pp. 1940-1945
Authors:
SUN JJ
TSAI JY
OSBURN CM
Citation: Jj. Sun et al., ELEVATED N(+) P JUNCTIONS BY IMPLANT INTO COSI2 FORMED ON SELECTIVE EPITAXY FOR DEEP-SUBMICRON MOSFETS/, I.E.E.E. transactions on electron devices, 45(9), 1998, pp. 1946-1952
Authors:
PARK M
LEE S
KIM CS
YU HK
NAM KS
Citation: M. Park et al., THE DETAILED ANALYSIS OF HIGH-Q CMOS-COMPATIBLE MICROWAVE SPIRAL INDUCTORS IN SILICON TECHNOLOGY, I.E.E.E. transactions on electron devices, 45(9), 1998, pp. 1953-1959
Authors:
STOLK PA
WIDDERSHOVEN FP
KLAASSEN DBM
Citation: Pa. Stolk et al., MODELING STATISTICAL DOPANT FLUCTUATIONS IN MOS-TRANSISTORS, I.E.E.E. transactions on electron devices, 45(9), 1998, pp. 1960-1971
Authors:
CHEN TP
LI S
FUNG S
BELING CD
LO KF
Citation: Tp. Chen et al., POSTSTRESS INTERFACE-TRAP GENERATION INDUCED BY OXIDE-FIELD STRESS WITH FN INJECTION, I.E.E.E. transactions on electron devices, 45(9), 1998, pp. 1972-1977
Authors:
MACSWEENEY D
MCCARTHY KG
MATHEWSON A
MASON B
Citation: D. Macsweeney et al., A SPICE COMPATIBLE SUBCIRCUIT MODEL FOR LATERAL BIPOLAR-TRANSISTORS IN A CMOS PROCESS, I.E.E.E. transactions on electron devices, 45(9), 1998, pp. 1978-1984
Authors:
JURCZAK M
JAKUBOWSKI A
LUKASIAK L
Citation: M. Jurczak et al., THE EFFECTS OF HIGH DOPING ON THE I-V CHARACTERISTICS OF A THIN-FILM SOI MOSFET, I.E.E.E. transactions on electron devices, 45(9), 1998, pp. 1985-1992
Authors:
CHUANG MY
LAW ME
O KK
Citation: My. Chuang et al., 3-DIMENSIONAL BASE DISTRIBUTED EFFECTS OF LONG STRIPE BJTS - AC EFFECTS ON INPUT CHARACTERISTICS, I.E.E.E. transactions on electron devices, 45(9), 1998, pp. 1993-2001
Authors:
XU QX
HU CM
Citation: Qx. Xu et Cm. Hu, NEW TI-SALICIDE PROCESS USING SB AND GE PREAMORPHIZATION FOR SUB-O.2 MU-M CMOS TECHNOLOGY, I.E.E.E. transactions on electron devices, 45(9), 1998, pp. 2002-2009
Authors:
REGGIANI S
VECCHI MC
RUDAN M
Citation: S. Reggiani et al., INVESTIGATION ON ELECTRON AND HOLE TRANSPORT-PROPERTIES USING THE FULL-BAND SPHERICAL-HARMONICS EXPANSION METHOD, I.E.E.E. transactions on electron devices, 45(9), 1998, pp. 2010-2017
Authors:
LAIH LH
CHANG TC
CHEN YA
TSAY WC
HONG JW
Citation: Lh. Laih et al., CHARACTERISTICS OF MSM PHOTODETECTORS WITH TRENCH ELECTRODES ON P-TYPE SI WAFER, I.E.E.E. transactions on electron devices, 45(9), 1998, pp. 2018-2023
Authors:
BRENNAN CR
CHRIS MF
TAYLOR C
HAEGEL NM
WHITE AM
Citation: Cr. Brennan et al., ELECTRON-BEAM-INDUCED CURRENT IMAGING OF NEAR-CONTACT REGIONS IN SEMIINSULATING GAAS, I.E.E.E. transactions on electron devices, 45(9), 1998, pp. 2024-2031
Authors:
ZHU Y
ISHIMARU Y
TAKAHASHI N
SHIMIZU M
Citation: Y. Zhu et al., CORRELATION BETWEEN CURRENT-VOLTAGE AND CAPACITANCE-VOLTAGE CHARACTERISTICS OF SCHOTTKY-BARRIER DIODES, I.E.E.E. transactions on electron devices, 45(9), 1998, pp. 2032-2036
Authors:
SPECIALE N
LEONE A
GRAZIANO V
PRIVITERA G
Citation: N. Speciale et al., A COMPACT MODEL FOR MULTITERMINAL BIPOLAR-DEVICES USED IN SMART POWERAPPLICATIONS, I.E.E.E. transactions on electron devices, 45(9), 1998, pp. 2037-2046