POSTSTRESS INTERFACE-TRAP GENERATION INDUCED BY OXIDE-FIELD STRESS WITH FN INJECTION

Interface trap generation in nMOS transistors during both stressing an d post-stress periods under the conditions of oxide held (dynamic and de) stress with FN injection is investigated with charge pumping techn ique. In contrast to the post-stress interface trap generation induced by hot carrier stress which is a logarithmical function of post-stres s time, the poststress interface trap generation induced by oxide-fiel d stress with FN injection first increases with post-stress time but t hen becomes saturated. The mechanisms for the interface trap generatio n in both stressing and post-stress periods are described.