A COMPACT MODEL FOR MULTITERMINAL BIPOLAR-DEVICES USED IN SMART POWERAPPLICATIONS

Complex technologies merging low-voltage bipolar devices and vertical current-flow power transistor allow more smart functions at low chip c ost but pose problems during the design phase because there is no way to predict the influence of the high-voltage transistor over the contr ol components by using standard bipolar junction transistor (BJT) mode ls. In fact, the large inductive load usually present in high-voltage power transistors applications fortes both negative substrate voltage and spurious currents that fan induce positive feedback among parasiti c devices, downgrading the performance of a single device and so of th e whole circuit. In this work we introduce a model for the five-termin al bipolar devices used in smart power applications. The model account s for all main static and dynamic parasitic effects and gives results in very good agreement with experimental data on both simple devices a nd complex integrated circuits currently implemented in commercial pro ducts for microprocessor based engine management systems (EMS's).