THE TEOS OXIDE DEPOSITED ON PHOSPHORUS IN-SITU POCL3 DOPED POLYSILICON WITH RAPID THERMAL ANNEALING IN N2O/

Authors
KAO CH LAI CS LEE CL
Citation
Ch. Kao et al., THE TEOS OXIDE DEPOSITED ON PHOSPHORUS IN-SITU POCL3 DOPED POLYSILICON WITH RAPID THERMAL ANNEALING IN N2O/, I.E.E.E. transactions on electron devices, 45(9), 1998, pp. 1927-1933
Citations number
17
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied
Journal title
I.E.E.E. transactions on electron devices → ACNP
ISSN journal
00189383
Volume
45
Issue
9
Year of publication
1998
Pages
1927 - 1933
Database
ISI
SICI code
0018-9383(1998)45:9<1927:TTODOP>2.0.ZU;2-S
Abstract
This work presents a TEOS oxide deposited on the phosphorus-in-situ do ped polysilicon with rapid thermal N2O annealing, The oxide exhibits g ood electron trapping characteristics with a charge-to-breakdown (Q(bd )) up to 110 C/cm(2). It is due to the good polysilicon/oxide interfac e morphology obtained by replacing POCl3 doping with in-situ doping an d the rapid thermal annealing in N2O, In addition, the N2O annealing d ensifies the deposited oxide and incorporates nitrogen into the oxide and at the polysilicon/oxide interface, thus improving the electrical characteristics.