INVESTIGATION ON ELECTRON AND HOLE TRANSPORT-PROPERTIES USING THE FULL-BAND SPHERICAL-HARMONICS EXPANSION METHOD

The full-band spherical-harmonics solution of the Boltzmann transport equation in silicon is achieved for both the conduction and valence ba nd. The relevant scattering mechanisms (impact ionization, acoustic an d optical phonons, ionized impurities) are modeled consistently. Compa rison with Monte Carlo carrier-distribution functions at different ele ctric fields emphasize the importance of a correct description of the band structure and scattering rates. The acoustic-phonon model is impr oved, the models of multiple collisions and impurity clustering, and t he partial ionization of impurities are introduced. Comparison with ex perimental mobility data shows agreement over a,vide range of temperat ures and doping concentrations.