THE DETAILED ANALYSIS OF HIGH-Q CMOS-COMPATIBLE MICROWAVE SPIRAL INDUCTORS IN SILICON TECHNOLOGY

We present the extensive experimental results and their detailed analy sis showing the important effects of layout parameters on the frequenc y responses of quality factor (Q) of rectangular spiral inductors, whi ch are fabricated on a silicon substrate by using conventional silicon CMOS technology, in order to determine the desirable values of layout parameters for designing the high Q inductors used in RF IC's applica tions. Analysis of the inductors on Si substrates with three kinds of resistivities has been performed by tailoring the geometric layout and varying the metal thickness. Using these results, the substrate effec ts on RF performance of inductors are also investigated by observing t he frequency responses of Q with varying the substrate resistivity in detail.