EXPERIMENTAL AND THEORETICAL-STUDY OF THE CURRENT-VOLTAGE CHARACTERISTICS OF THE MISIM TUNNEL TRANSISTOR

Authors
MAJKUSIAK B
Citation
B. Majkusiak, EXPERIMENTAL AND THEORETICAL-STUDY OF THE CURRENT-VOLTAGE CHARACTERISTICS OF THE MISIM TUNNEL TRANSISTOR, I.E.E.E. transactions on electron devices, 45(9), 1998, pp. 1903-1911
Citations number
30
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied
Journal title
I.E.E.E. transactions on electron devices → ACNP
ISSN journal
00189383
Volume
45
Issue
9
Year of publication
1998
Pages
1903 - 1911
Database
ISI
SICI code
0018-9383(1998)45:9<1903:EATOTC>2.0.ZU;2-W
Abstract
Current-voltage (I-V) characteristics of the metal-insulator-semicondu ctor-insulator-metal (MISIM) tunnel transistor in the common base and common emitter configurations are studied experimentally and theoretic ally. The Al-SiO2-Si(n)-SiO2-Al transistors with oxide layers of about 2.5 nm thickness have been manufactured. The devices exhibit current gain above 30 in the common base configuration and sn;itching in the c ommon emitter configuration. cl theoretical static model of the MISIM tunnel transistor has been developed and applied to analyze the measur ed current-voltage characteristics for both operation configurations. Excellent fit of the model to the experimental data has been achieved, Influence of oxide thickness and interface trap density on the switch ing voltage has been investigated theoretically.