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Results: 2
ELECTRICAL STRESSING OF SUBMICROMETER MOSFETS WITH RAISED SOURCE DRAIN STRUCTURES REALIZED BY SELECTIVE EPITAXIAL-GROWTH OF SILICON USING SILANE ONLY/
Authors: WAITE A EVANS AGR AFSHARHANAII N
Citation: A. Waite et al., ELECTRICAL STRESSING OF SUBMICROMETER MOSFETS WITH RAISED SOURCE DRAIN STRUCTURES REALIZED BY SELECTIVE EPITAXIAL-GROWTH OF SILICON USING SILANE ONLY/, Electronics Letters, 30(17), 1994, pp. 1455-1456
IMPROVED HOT-ELECTRON DEGRADATION IN NMOSFETS WITH ELEVATED SOURCE AND DRAIN STRUCTURES REALIZED BY SELECTIVE EPITAXIAL-GROWTH OF SILICON USING SILANE ONLY
Authors: AFSHARHANAII N PEERLINGS J EVANS AGR CARTER JC
Citation: N. Afsharhanaii et al., IMPROVED HOT-ELECTRON DEGRADATION IN NMOSFETS WITH ELEVATED SOURCE AND DRAIN STRUCTURES REALIZED BY SELECTIVE EPITAXIAL-GROWTH OF SILICON USING SILANE ONLY, Electronics Letters, 29(17), 1993, pp. 1586-1587
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