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Results: 3
FABRICATION OF HIGH-PERFORMANCE 512KB SRAMS IN 0.25 MU-M CMOS TECHNOLOGY USING X-RAY-LITHOGRAPHY
Authors: VISWANATHAN R SEEGER D BRIGHT A BUCELOT T POMERENE A PETRILLO K BLAUNER P AGNELLO P WARLAUMONT J CONWAY J PATEL D
Citation: R. Viswanathan et al., FABRICATION OF HIGH-PERFORMANCE 512KB SRAMS IN 0.25 MU-M CMOS TECHNOLOGY USING X-RAY-LITHOGRAPHY, Microelectronic engineering, 23(1-4), 1994, pp. 247-252
FABRICATION OF HIGH-PERFORMANCE 512K STATIC-RANDOM ACCESS MEMORIES IN0.25 MU-M COMPLEMENTARY METAL-OXIDE-SEMICONDUCTOR TECHNOLOGY USING X-RAY-LITHOGRAPHY
Authors: VISWANATHAN R SEEGER D BRIGHT A BUCELOT T POMERENE A PETRILLO K BLAUNER P AGNELLO P WARLAUMONT J CONWAY J PATEL D
Citation: R. Viswanathan et al., FABRICATION OF HIGH-PERFORMANCE 512K STATIC-RANDOM ACCESS MEMORIES IN0.25 MU-M COMPLEMENTARY METAL-OXIDE-SEMICONDUCTOR TECHNOLOGY USING X-RAY-LITHOGRAPHY, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 11(6), 1993, pp. 2910-2919
EXPERIMENTAL 0.1-MU-M P-CHANNEL MOSFET WITH P-POLYSILICON GATE ON 35-ANGSTROM GATE OXIDE()
Authors: TAUR Y COHEN S WIND S LII T HSU C QUINLAN D CHANG CA BUCHANAN D AGNELLO P MII YJ REEVES C ACOVIC A KESAN V
Citation: Y. Taur et al., EXPERIMENTAL 0.1-MU-M P-CHANNEL MOSFET WITH P-POLYSILICON GATE ON 35-ANGSTROM GATE OXIDE(), IEEE electron device letters, 14(6), 1993, pp. 304-306
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