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Results:
1-7
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Results: 7
Authors:
WONG HSP
CHANG RT
CRABBE E
AGNELLO PD
Citation: Hsp. Wong et al., CMOS ACTIVE PIXEL IMAGE SENSORS FABRICATED USING A 1.8-V, 0.25-MU-M CMOS TECHNOLOGY, I.E.E.E. transactions on electron devices, 45(4), 1998, pp. 889-894
Authors:
JENKINS KA
BURGHARTZ JN
AGNELLO PD
Citation: Ka. Jenkins et al., IDENTIFICATION OF GATE ELECTRODE DISCONTINUITIES IN SUBMICRON CMOS TECHNOLOGIES, AND EFFECT ON CIRCUIT PERFORMANCE, I.E.E.E. transactions on electron devices, 43(5), 1996, pp. 759-765
Authors:
MANN RW
CLEVENGER LA
AGNELLO PD
WHITE FR
Citation: Rw. Mann et al., SILICIDES AND LOCAL INTERCONNECTIONS FOR HIGH-PERFORMANCE VLSI APPLICATIONS, IBM journal of research and development, 39(4), 1995, pp. 403-417
Authors:
AGNELLO PD
KESAN VP
TEJWANI M
OTT JA
Citation: Pd. Agnello et al., TITANIUM SILICIDE GERMANIDE FORMATION ON SUBMICRON FEATURES FOR HIGH-MOBILITY SIGE CHANNEL FIELD-EFFECT TRANSISTORS, Journal of electronic materials, 23(4), 1994, pp. 413-421
Authors:
AGNELLO PD
FINK A
Citation: Pd. Agnello et A. Fink, IMPROVED CONTROL OF MOMENTARY RAPID THERMAL ANNEALING FOR SILICIDATION, Journal of electronic materials, 22(6), 1993, pp. 661-665
Authors:
AGNELLO PD
SEDGWICK TO
COTTE J
Citation: Pd. Agnello et al., GROWTH-RATE ENHANCEMENT OF HEAVY N-TYPE AND P-TYPE DOPED SILICON DEPOSITED BY ATMOSPHERIC-PRESSURE CHEMICAL-VAPOR-DEPOSITION AT LOW-TEMPERATURES, Journal of the Electrochemical Society, 140(9), 1993, pp. 2703-2709
Authors:
SEDGWICK TO
AGNELLO PD
GRUTZMACHER DA
Citation: To. Sedgwick et al., EFFECTS OF TRACE SURFACE OXIDATION IN LOW-TEMPERATURE EPITAXY-GROWN FROM DICHLOROSILANE, Journal of the Electrochemical Society, 140(12), 1993, pp. 3684-3688
Risultati:
1-7
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