CMOS ACTIVE PIXEL IMAGE SENSORS FABRICATED USING A 1.8-V, 0.25-MU-M CMOS TECHNOLOGY

Authors
WONG HSP CHANG RT CRABBE E AGNELLO PD
Citation
Hsp. Wong et al., CMOS ACTIVE PIXEL IMAGE SENSORS FABRICATED USING A 1.8-V, 0.25-MU-M CMOS TECHNOLOGY, I.E.E.E. transactions on electron devices, 45(4), 1998, pp. 889-894
Citations number
14
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied
Journal title
I.E.E.E. transactions on electron devices → ACNP
ISSN journal
00189383
Volume
45
Issue
4
Year of publication
1998
Pages
889 - 894
Database
ISI
SICI code
0018-9383(1998)45:4<889:CAPISF>2.0.ZU;2-#
Abstract
This paper reports the experimental results of the first CMOS active p ixel image sensors (APS) fabricated using a high-performance 1.8-V, 0. 25-mu m CMOS logic technology, No process modifications were made to t he CMOS logic technology so that the impact of device scaling on the i mage sensing performance can be studied, This paper highlights the dev ice and process design considerations required to enable CMOS as an im age sensor technology.