Authors: HASNAT K YEAP CF JALLEPALLI S HARELAND SA SHIH WK AGOSTINELLI VM TASCH AF MAZIAR CM

Citation: K. Hasnat et al., THERMIONIC EMISSION MODEL OF ELECTRON GATE CURRENT IN SUBMICRON NMOSFETS, I.E.E.E. transactions on electron devices, 44(1), 1997, pp. 129-138

Authors: AGOSTINELLI VM HASNAT K BORDELON TJ LEMERSAL DB TASCH AF MAZIAR CM

Citation: Vm. Agostinelli et al., SENSITIVITY ISSUES IN MODELING THE SUBSTRATE CURRENT FOR SUBMICRON N-CHANNEL AND P-CHANNEL MOSFETS, Solid-state electronics, 37(9), 1994, pp. 1627-1632

Authors: AGOSTINELLI VM BORDELON TJ WANG XL HASNAT K YEAP CF LEMERSAL DB TASCH A MAZIAR CM

Citation: Vm. Agostinelli et al., 2-DIMENSIONAL ENERGY-DEPENDENT MODELS FOR THE SIMULATION OF SUBSTRATECURRENT IN SUBMICRON MOSFETS, I.E.E.E. transactions on electron devices, 41(10), 1994, pp. 1784-1795

Authors: AGOSTINELLI VM YERIC GM TASCH AF

Citation: Vm. Agostinelli et al., UNIVERSAL MOSFET HOLE MOBILITY DEGRADATION MODELS FOR CIRCUIT SIMULATION, IEEE transactions on computer-aided design of integrated circuits and systems, 12(3), 1993, pp. 439-445

Authors: YUE C AGOSTINELLI VM YERIC GM TASCH AF

Citation: C. Yue et al., IMPROVED UNIVERSAL MOSFET ELECTRON-MOBILITY DEGRADATION MODELS FOR CIRCUIT SIMULATION, IEEE transactions on computer-aided design of integrated circuits and systems, 12(10), 1993, pp. 1542-1546