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Results: 5

Authors: SNYMAN LW AHARONI H DUPLESSIS M GOUWS RBJ
Citation: Lw. Snyman et al., INCREASED EFFICIENCY OF SILICON LIGHT-EMITTING-DIODES IN A STANDARD 1.2-MU-M SILICON COMPLEMENTARY METAL-OXIDE-SEMICONDUCTOR TECHNOLOGY, Optical engineering, 37(7), 1998, pp. 2133-2141

Authors: SNYMAN LW AHARONI H DUPLESSIS M
Citation: Lw. Snyman et al., CHARACTERIZATION OF BREAKDOWN PHENOMENA IN LIGHT-EMITTING SILICON N+PDIODES, Journal of applied physics, 84(5), 1998, pp. 2953-2959

Authors: AHARONI H OHMI T OKA MM NAKADA A TAMAI Y
Citation: H. Aharoni et al., ANALYSIS OF N(+)P SILICON JUNCTIONS WITH VARYING SUBSTRATE DOPING CONCENTRATIONS MADE UNDER ULTRACLEAN PROCESSING TECHNOLOGY, Journal of applied physics, 81(3), 1997, pp. 1270-1288

Authors: AHARONI H OHMI T SHIBATA T OKA MM NAKADA A TAMAI Y
Citation: H. Aharoni et al., A COMPARATIVE-EXAMINATION OF ION-IMPLANTED N(-DEGREES-C AND 450-DEGREES-C()P JUNCTIONS ANNEALED AT 1000), JPN J A P 1, 35(9A), 1996, pp. 4606-4617

Authors: AHARONI H DUPLESSIS M
Citation: H. Aharoni et M. Duplessis, THE SPATIAL-DISTRIBUTION OF LIGHT FROM SILICON LEDS, Sensors and actuators. A, Physical, 57(3), 1996, pp. 233-237
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