Authors:
SNYMAN LW
AHARONI H
DUPLESSIS M
GOUWS RBJ
Citation: Lw. Snyman et al., INCREASED EFFICIENCY OF SILICON LIGHT-EMITTING-DIODES IN A STANDARD 1.2-MU-M SILICON COMPLEMENTARY METAL-OXIDE-SEMICONDUCTOR TECHNOLOGY, Optical engineering, 37(7), 1998, pp. 2133-2141
Citation: Lw. Snyman et al., CHARACTERIZATION OF BREAKDOWN PHENOMENA IN LIGHT-EMITTING SILICON N+PDIODES, Journal of applied physics, 84(5), 1998, pp. 2953-2959
Citation: H. Aharoni et al., ANALYSIS OF N(+)P SILICON JUNCTIONS WITH VARYING SUBSTRATE DOPING CONCENTRATIONS MADE UNDER ULTRACLEAN PROCESSING TECHNOLOGY, Journal of applied physics, 81(3), 1997, pp. 1270-1288
Authors:
AHARONI H
OHMI T
SHIBATA T
OKA MM
NAKADA A
TAMAI Y
Citation: H. Aharoni et al., A COMPARATIVE-EXAMINATION OF ION-IMPLANTED N(-DEGREES-C AND 450-DEGREES-C()P JUNCTIONS ANNEALED AT 1000), JPN J A P 1, 35(9A), 1996, pp. 4606-4617
Citation: H. Aharoni et M. Duplessis, THE SPATIAL-DISTRIBUTION OF LIGHT FROM SILICON LEDS, Sensors and actuators. A, Physical, 57(3), 1996, pp. 233-237