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Results: 1-9 |
Results: 9
EFFECTS OF ALLOY AMBIENT ON PDGE CONTACTS ON N-TYPE GAAS
Authors: AHMARI DA HATTENDORF ML LEMMERHIRT DF YANG Q HARTMANN QJ BAKER JE STILLMAN GE
Citation: Da. Ahmari et al., EFFECTS OF ALLOY AMBIENT ON PDGE CONTACTS ON N-TYPE GAAS, Applied physics letters, 72(26), 1998, pp. 3479-3481
INGAP GAAS HETEROJUNCTION BIPOLAR-TRANSISTOR GROWN ON A SEMIINSULATING INGAP BUFFER LAYER/
Authors: AHMARI DA FRESINA MT HARTMANN QJ BARLAGE DW FENG M STILLMAN GE
Citation: Da. Ahmari et al., INGAP GAAS HETEROJUNCTION BIPOLAR-TRANSISTOR GROWN ON A SEMIINSULATING INGAP BUFFER LAYER/, IEEE electron device letters, 18(11), 1997, pp. 559-561
SEMIINSULATING IN0.49GA0.51P GROWN AT REDUCED SUBSTRATE-TEMPERATURE BY LOW-PRESSURE METALORGANIC CHEMICAL-VAPOR-DEPOSITION
Authors: HARTMANN QJ GARDNER NF HORTON TU CURTIS AP AHMARI DA FRESINA MT BAKER JE STILLMAN GE
Citation: Qj. Hartmann et al., SEMIINSULATING IN0.49GA0.51P GROWN AT REDUCED SUBSTRATE-TEMPERATURE BY LOW-PRESSURE METALORGANIC CHEMICAL-VAPOR-DEPOSITION, Applied physics letters, 70(14), 1997, pp. 1822-1824
HIGH-SPEED INGAP GAAS HBTS WITH A STRAINED INXGA1-XAS BASE/
Authors: AHMARI DA FRESINA MT HARTMANN QJ BARLAGE DW MARES PJ FENG M STILLMAN GE
Citation: Da. Ahmari et al., HIGH-SPEED INGAP GAAS HBTS WITH A STRAINED INXGA1-XAS BASE/, IEEE electron device letters, 17(5), 1996, pp. 226-228
HIGH-SPEED INP INGAAS HETEROJUNCTION BIPOLAR-TRANSISTOR UTILIZING NONALLOYED CONTACTS ON N(+)-INP CONTACTING LAYERS/
Authors: FRESINA MT AHMARI DA THOMAS S BARLAGE DW MARTINO CA FENG M STILLMAN GE
Citation: Mt. Fresina et al., HIGH-SPEED INP INGAAS HETEROJUNCTION BIPOLAR-TRANSISTOR UTILIZING NONALLOYED CONTACTS ON N(+)-INP CONTACTING LAYERS/, Journal of electronic materials, 25(10), 1996, pp. 1637-1639
REMOVAL OF HYDROGEN FROM THE BASE OF CARBON-DOPED IN0.49GA0.51P GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS BY EX-SITU ANNEALING AND THE EFFECTS ON DEVICE CHARACTERISTICS/
Authors: HARTMANN QJ HWANGBO H YUNG A AHMARI DA FRESINA MT BAKER JE STILLMAN GE
Citation: Qj. Hartmann et al., REMOVAL OF HYDROGEN FROM THE BASE OF CARBON-DOPED IN0.49GA0.51P GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS BY EX-SITU ANNEALING AND THE EFFECTS ON DEVICE CHARACTERISTICS/, Applied physics letters, 68(7), 1996, pp. 982-984
HIGH-SPEED, LOW-NOISE INGAP GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS/
Authors: FRESINA MT AHMARI DA MARES PJ HARTMANN QJ FENG M STILLMAN GE
Citation: Mt. Fresina et al., HIGH-SPEED, LOW-NOISE INGAP GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS/, IEEE electron device letters, 16(12), 1995, pp. 540-541
EFFECT OF COLLECTOR DESIGN ON THE DC CHARACTERISTICS OF IN0.49GA0.51PGAAS HETEROJUNCTION BIPOLAR-TRANSISTORS/
Authors: HARTMANN QJ FRESINA MT AHMARI DA STILLMAN GE
Citation: Qj. Hartmann et al., EFFECT OF COLLECTOR DESIGN ON THE DC CHARACTERISTICS OF IN0.49GA0.51PGAAS HETEROJUNCTION BIPOLAR-TRANSISTORS/, Solid-state electronics, 38(12), 1995, pp. 2017-2021
ANALYSIS OF THE OFFSET VOLTAGE OF INGAP GAAS SINGLE, DOUBLE, AND COMPOSITE DOUBLE-HETEROJUNCTION BIPOLAR-TRANSISTORS/
Authors: FRESINA MT HARTMANN QJ AHMARI DA GARDNER NF STILLMAN GE
Citation: Mt. Fresina et al., ANALYSIS OF THE OFFSET VOLTAGE OF INGAP GAAS SINGLE, DOUBLE, AND COMPOSITE DOUBLE-HETEROJUNCTION BIPOLAR-TRANSISTORS/, Journal of applied physics, 77(10), 1995, pp. 5437-5439
Risultati: 1-9 |